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| UNISONIC TECHNOLOGIES CO., 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2 1 MOSFET DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications 3 SOT-23 FEATURES * High density cell design for low RDS(ON). * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability *Pb-free plating product number: 2N7002L PIN CONFIGURATION PIN NO. PIN NAME 1 SOURCE 2 GATE 3 DRAIN MARKING 3P ORDERING INFORMATION Order Number Normal Lead free 2N7002-AE3-R 2N7002L-AE3-R Package SOT-23 Packing Tape Reel www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., 1 QW-R206-037,B 2N7002 ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted.) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS 1M) Gate Source Voltage Continuous Non Repetitive(tp<50s) Maximum Drain Continuous Current Pulsed Maximum Power Dissipation Derated above 25C Operating Temperature Storage Temperature SYMBOL VDSS VDGR VGSS ID PD TOPR TSTG RATINGS 60 60 20 40 115 800 200 1.6 0 ~ +70 -40 ~ +150 MOSFET UNIT V V V mA mW mW/C C THERMAL CHARACTERISTICS PARAMETER Thermal Resistance, Junction to Ambient SYMBOL JA RATINGS 625 UNIT C/W ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage, Forward Gate-Body leakage Reverse ON CHARACTERISTICS (Note) Gate Threshold Voltage Drain-Source On-Voltage On-State Drain Current Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time SYMBOL BVDSS IDSS IGSSF IGSSR VGS (th) VDS (ON) ID(ON) RDS (ON) gFS Ciss Coss Crss tON TEST CONDITIONS VGS=0V, ID=10A VDS=60V, VGS =0V TJ=125C VGS =20V, VDS=0V VGS =-20V, VDS=0V VGS = VDS, ID=250A VGS = 10V, ID=500mA VGS = 5.0V, ID=50mA VGS=10V,VDS2VDS(ON) VGS =10V, ID=500mA TJ=100C VGS =5.0V, ID=50mA TJ=100C VDS2VDS(ON), ID=200mA VDS=25V,VGS=0V,f=1.0MHz 1 2.1 0.6 0.09 2700 1.2 1.7 1.7 2.4 320 20 11 4 MIN 60 0.5 1 100 -100 2.5 3.75 1.5 7.5 13.5 7.5 13.5 TYP MAX UNIT V mA A nA nA V V mA 500 80 mS 50 25 5 20 pF pF pF nS VDD=30V, RL=150 ID=200mA, VGS =10V RGEN =25 VDD=30V, RL=25 ID=200mA, VGS=10V Turn-Off Time tOFF RGEN =25 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, Is=115mA (Note ) Maximum Pulsed Drain-Source Diode ISM Forward Current Maximum Continuous Drain-Source Is Diode Forward Current Note: Pulse Test: Pulse Width300s, Duty Cycle2.0% 20 nS 0.88 1.5 0.8 115 V A mA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R206-037,B 2N7002 TEST CIRCUIT AND WAVEFORM VDD MOSFET RL VIN D VGS R GEN G S DUT VOUT Figure 1 ton td (on) tr 90% td(off ) t off tf 90% Output , Vout 10% 10% Inverted 90% Input, Vin 10% 50% 50% Pulse Width Figure 2. Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R206-037,B 2N7002 TYPICAL CHARACTERICS DRAIN - SOURCE CURRENT, I D (A) MOSFET VGS=10V 1.5 8.0V 7.0V 6.0V NORMALIZED DRAIN-SOURCE ON-RESISTANCE, RDS (ON) 2 9.0V 3 2.5 2 1.5 1 0.5 0 0.4 0 .8 VGS=4.0V 4.5V 5.0V 6.0V 7.0V 8.0V 9.0V 10V 1 0.5 0 0 1 2 3 4 5.0V 4.0V 3.0V 5 1.2 1.6 2 DRAIN - SOURCE VOLTAGE, VDS (V) Figure 3. On-Region Characteristics DRAIN CURRENT, ID (A) Figure 4. On-Resistance Varisation with Gate Voltage and Drain Current NORMALIZED DRAIN-SOURCE ON- RESISTANCE , R DS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE, R DS (ON) 2 1.75 1.5 1.25 1 0.75 0.5 3 VGS=10V ID=500mA 2.5 2 1.5 25 1 0.5 0 0 0.4 0.8 1.2 1.6 2 DRAIN CURRENT,I D (A) Figure 6. On-Resistance Varisation with Drain Current and Temperature VGS =10V TJ =125 - 50 - 25 0 25 50 75 100 125 150 JUCTION TEMPERATURE, TJ (C) Figure 5. On-Resistance Varisation with Temperature 2 DRAIN CURRENT, ID (A) 125 NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE, Vth VDS=10V 25 1.1 1.05 1 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 VGS = VDS ID = 1mA 1.6 1. 8 1.2 0.4 0 0 2 4 6 8 10 GATE TO SOURCE VOLTAGE , VGS (V) Figure 7. Transfer Characteristics 100 125 150 JUCTION TEMPERATURE, TJ (C) Figure 8. Gate Threshold Varisation with Temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R206-037,B 2N7002 TYPICAL CHARACTERICS (cont.) REVERSE DRAIN CURRENT, IS (A) NORMALIZED DRAIN-SOURCE VREAKDOWN VOLTAGE, BVDSS 1.1 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 -25 0 25 50 75 100 125 150 2 1 0.5 TJ =125 0.1 0.05 0.01 0.005 0.001 0.2 25 VGS=0V ID = 250A MOSFET 0.4 0.6 0.8 1 1.2 1.4 JUCTION TEMPERATURE, TJ (C) Figure 9. Breakdown Voltage Varisation with Temperature BODY DIODE FORWARD VOLTAGE , VSD (V) Figure 10. Body Diode Forward Voltage Varisation with Temperature GATE-SOURCE VOLTAGE, VGS (V) 60 40 CAPACITANCE (pF) 10 8 6 VDS = 25V 20 10 5 2 1 1 Ciss Coss ID = 500mA 4 2 115 mA 0 0 0.4 0.8 1.2 1.6 2 GATE CHARGE, Qg (nC) Figure 12. Gate Charge Characteristics 280mA Crss VGS =0V f=1MHz 2 3 5 10 20 30 50 DRAIN TO SOURCE VOLTAGE, VDS (V) Figure 11. Capacitance Characteristics NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE, r (t) 3 1 0.5 0.2 0.1 0.05 D=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.002 0.001 0.0001 0.001 0.01 0.1 RJA ( t) =r (t)xRJA RJA =(See Datasheet) P (pk) t2 TJxTA =PxRJA (t) Duty Cycle, D=t1/t2 1 10 100 300 t1 DRAIN CURRENT, ID (A) 2 1 0.5 im it it m N) L i ( ON) L R DS RD S(O 100 s 1m s 10m s 1s DC 10s 0.1 0.05 0.01 0.01 0.005 1 VGS=0V SINGLE PULSE TA=25 2 5 10 20 30 60 80 DRAIN TO SOURCE VOLTAGE, VDS (V) Figure 13. Maximum Safe Operating Area t1, TIME (sec) Figure 14. Transient Thermal Response Curve UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 QW-R206-037,B 2N7002 MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 QW-R206-037,B |
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